RESUMO
We have developed a simple and reliable method for the fabrication of sub-10 nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and silicon atoms during the silicidation process. The nanogap width is determined by the metal layer thickness. Our proposed method can produce symmetric and asymmetric electrode nanogaps, as well as multiple nanogaps within one unique process step, for potential application to biological/chemical sensors and nanoelectronics, such as resistive switches, storage devices, and vacuum channel transistors. This method provides high throughput and it is suitable for large-scale production.
RESUMO
Conductive polymers are a class of materials with vast potential for tomorrow's ultra-large-scale technologies as they combine structural and functional diversity with flexible synthesis and processing approaches. A missing component, with their subtle chemical structure, is reliable building at nanoscale. Here we report on the patterning of polyaniline, a prototypical conjugated polymer, with an unprecedented areal patterning order and density exceeding 0.25 teradot/inch(2). With template-confined growth, through platinum-surface-catalyzed polymerization of aniline, highly ordered arrays of distinct polyaniline nanowires are produced with a typical diameter
